000			02050naa a2200253 a 4500
003			AR-LpUFIB
005			20250311170452.0
008			230201s2016 xx o 000 0 eng d
024	8		_aDIF-M7750 _b7970 _zDIF007080
040			_aAR-LpUFIB _bspa _cAR-LpUFIB
100	1		_aCappelletti, Marcelo
245	1	0	_aStudy of the electrical parameters degradation of GaAs sub-cells for triple junction space solar cells by computer simulation
300			_a1 archivo (1,9 MB)
500			_aFormato de archivo PDF. -- Este documento es producción intelectual de la Facultad de Informática - UNLP (Colección BIPA/Biblioteca)
520			_aIn this paper, a theoretical study of the electrical parameters degradation of different n-type GaAs sub-cells for InGaP/GaAs/Ge triple junction solar cells irradiated with 1 and 5 MeV electrons has been performed by means of computer simulation. Effects of base carrier concentration upon the maximum power point, short-circuit current, open circuit voltage, diffusion current, recombination current and series resistance of these devices have been researched using the displacement damage dose method, the one-dimensional PC1D device modeling program and a home-made numerical code based on genetic algorithms. The radiative recombination lifetime, damage constant for minority-carrier lifetime and carrier removal rate models for GaAs sub-cells have been used in the simulations. An analytical model has been proposed, which is useful to describe the radiation-induced degradation of diffusion current, recombination current and series resistance. Results obtained in this work can be used to predict the radiation resistance of solar cells over a wide range of energies.
534			_aSemiconductor Science and Technology, 31(11), pp. 1-8.
650		4	_aALGORITMOS GENÉTICOS
700	1		_aCasas, Guillermo
700	1		_aMorales, Daniel Martín
700	1		_aHasperué, Waldo
700	1		_aPeltzer y Blancá, Eitel Leopoldo
856	4	0	_uhttp://dx.doi.org/10.1088/0268-1242/31/11/115020
942			_cCP
999			_c56856 _d56856